Organic light emitting display device

ABSTRACT

An organic light emitting display device includes a substrate, a pixel structure, and a touch sensor electrode. The substrate includes a sub-pixel region and a transparent region. The pixel structure is disposed in the sub-pixel region on the substrate. The touch sensor electrode is disposed in the transparent region on the substrate.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation application of U.S. patentapplication Ser. No. 17/203,841 filed on Mar. 17, 2021, which is acontinuation application of U.S. patent application Ser. No. 16/577,891filed on Sep. 20, 2019 (now U.S. Pat. No. 10,985,223), which is acontinuation application of U.S. patent application Ser. No. 15/392,305filed on Dec. 28, 2016 (now U.S. Pat. No. 10,439,009), which claimspriority under 35 USC § 119 to Korean Patent Applications No.10-2016-0009442, filed on Jan. 26, 2016 in the Korean IntellectualProperty Office (KIPO), the disclosures of which are incorporated hereinin their entirety by reference.

BACKGROUND 1. Field

Example embodiments relate generally to organic light emitting displaydevices. More particularly, embodiments of the present inventive conceptrelate to organic light emitting display devices including a transparentregion.

2. Description of the Related Art

A flat panel display (FPD) device is widely used as a display device ofan electronic device because the FPD device is lightweight and thincompared to a cathode-ray tube (CRT) display device. Typical examples ofthe FPD device are a liquid crystal display (LCD) device and an organiclight emitting (OLED) display device. Compared to the LCD device, theOLED device has many advantages such as a higher luminance and a widerviewing angle. In addition, the OLED device can be made thinner becausethe OLED device does not require a backlight. In the OLED device,electrons and holes are injected into an organic thin layer through acathode and an anode, and then recombined in the organic thin layer togenerate excitons, thereby a light of a certain wavelength can beemitted.

Recently, a transparent OLED device capable of transmitting an image ofan object (or a target) that is located in the rear (e.g., the back) ofthe OLED device by including a transparent region and a pixel region hasbeen developed. Here, opaque metal wirings which reduce a transmissivityof the transparent OLED device may not be disposed in the transparentregion of the transparent OLED device. In addition, a touch screen panelmay be disposed on the transparent OLED device, and may be electricallyconnected to the transparent OLED device. The touch screen panel mayinclude sensing electrodes to sense (or detect) a contact (e.g., afinger, a touch pen, etc.) of a user of the transparent OLED device. Forexample, the touch screen panel may sense a contact (or an input) of theuser, and the method may use a self-capacitance, a mutual-capacitance,etc. for sensing the contact of the user. Here, the touch screen panelof the self-capacitance method may include a plurality of touch sensorelectrodes and touch sensor wirings connected to the touch sensorelectrodes respectively, and the touch screen panel may sense a changein capacitance which is generated in the touch sensor electrodes.Accordingly, when the user contacts the front of the touch screen panel,the transparent OLED device may sense the contact of the user. However,as the transparent OLED device includes the touch screen panel forsensing touch events, a thickness of the transparent OLED device may beincreased.

SUMMARY

Some example embodiments provide an organic light emitting displaydevice capable of sensing a contact of a user.

According to some aspect of example embodiments, an organic lightemitting display (OLED) device includes a substrate, a pixel structure,and a touch sensor electrode. The substrate includes a sub-pixel regionand a transparent region. The pixel structure is disposed in thesub-pixel region on the substrate. The touch sensor electrode isdisposed in the transparent region on the substrate.

In example embodiments, the sub-pixel region and the transparent regiondo not overlap in a plan view.

In example embodiments, the OLED device may further include a touchsensor wiring on the touch sensor electrode, the touch sensor wiringelectrically connecting the touch sensor electrode and an externaldevice, transferring a changed capacitance of the touch sensor electrodeto the external device and providing a sensing voltage generated fromthe external device to the touch sensor electrode.

In example embodiments, the substrate may include a plurality of pixelregions each having the sub-pixel regions and the transparent region.The external device senses a change in capacitance which is generated inthe touch sensor electrodes that are disposed in the transparentregions.

In example embodiments, the pixel structure may include a lowerelectrode on the substrate, a light emitting layer on the lowerelectrode, and an upper electrode on the light emitting layer.

In example embodiments, the touch sensor electrode and the lowerelectrode may be simultaneously formed using the same materials, and maybe located at the same level.

In example embodiments, the touch sensor electrode and the lowerelectrode may be simultaneously formed, and may be located at differentlevels from each other.

In example embodiments, when the lower electrode includes a plurality ofelectrode layers, the touch sensor electrode and at least one electrodelayer among the plurality of electrode layers may have the samematerials.

In example embodiments, a thickness of the touch sensor electrode may beless than a thickness of the lower electrode, and the touch sensorelectrode may be substantially transparent.

In example embodiments, the touch sensor electrode and the upperelectrode may be simultaneously formed using the same materials.

In example embodiments, the touch sensor electrode and the upperelectrode may be spaced apart from each other in a boundary of thesub-pixel region and the transparent region.

In example embodiments, the touch sensor electrode and the upperelectrode may be simultaneously formed using the same materials, and maybe located at different levels from each other.

In example embodiments, the OLED device may further include a pixeldefining layer. The pixel defining layer may be disposed on thesubstrate. The pixel defining layer may partially expose the lowerelectrode disposed in the sub-pixel region, and may partially exposingthe touch sensor electrode disposed in the transparent region.

In example embodiments, the OLED device may further include aplanarization layer. The planarization layer may be disposed between thepixel defining layer and the substrate. The planarization layer may havea contact hole disposed in the transparent region.

In example embodiments, the OLED device may further include a touchsensor wiring disposed on the touch sensor electrode. The touch sensorwiring may electrically connecting the touch sensor electrode and anexternal device via the contact hole of the planarization layer,transferring a changed capacitance of the touch sensor electrode to theexternal device and providing a sensing voltage generated from theexternal device to the touch sensor electrode.

In example embodiments, the OLED device may further include asemiconductor element. The semiconductor element may be disposed in thesub-pixel region on the substrate. The semiconductor element may includean active layer on the substrate, a gate electrode on the active layer,and source and drain electrodes on the gate electrode.

In example embodiments, the touch sensor wiring and the source and drainelectrodes may be simultaneously formed using the same materials, and athickness of the touch sensor wiring may be less than a thickness of thesource and drain electrodes. The touch sensor wiring may besubstantially transparent.

In example embodiments, the substrate may further include an opaqueregion between the sub-pixel region and the transparent region, and thepixel defining layer may be disposed in the opaque region.

In example embodiments, the OLED device may further include aplanarization layer. The planarization layer may have a contact holedisposed in the opaque region.

In example embodiments, the touch sensor electrode may extend in thefirst direction on the planarization layer, and may overlap at least aportion of the opaque region.

In example embodiments, the OLED device may further include a touchsensor wiring. The touch sensor wiring may be disposed on the touchsensor electrode. The touch sensor wiring may electrically connect thetouch sensor electrode and an external device via the contact hole ofthe planarization layer, and may transfer a changed capacitance of thetouch sensor electrode to the external device. The touch sensor wiringmay provide a sensing voltage generated from the external device to thetouch sensor electrode.

In example embodiments, the OLED device may further include asemiconductor element in the sub-pixel region on the substrate. Thesemiconductor element may include an active layer on the substrate, agate electrode on the active layer, and source and drain electrodes onthe gate electrode.

In example embodiments, the touch sensor wiring and the source and drainelectrodes may be simultaneously formed using the same materials.

In example embodiments, a thickness of the touch sensor wiring may bethe same as a thickness of the source and drain electrodes.

In example embodiments, the pixel defining layer may be opaque.

In example embodiments, the OLED device may further include a lightblocking member. The light blocking member may be disposed on the pixeldefining layer, and may overlap the touch sensor wiring.

In example embodiments, the OLED device may further include aplanarization layer and a pixel defining layer. The pixel defining layermay be disposed on the planarization layer, and may partially expose thelower electrode disposed in the sub-pixel region. The pixel defininglayer may expose at least a portion of the planarization layer in thetransparent region.

In example embodiments, the touch sensor electrode may be disposed onthe planarization layer that is exposed in the transparent region, andthe upper electrode may be disposed on the lower electrode. The touchsensor electrode and the upper electrode may be spaced apart from eachother on the pixel defining layer.

In example embodiments, the OLED device may further include a touchsensor wiring and a light blocking member. The touch sensor wiring maybe disposed on the pixel defining layer. The touch sensor wiring mayelectrically connect the touch sensor electrode and an external device,and may transfer a changed capacitance of the touch sensor electrode tothe external device. The touch sensor wiring may provide a sensingvoltage generated from the external device to the touch sensorelectrode. The light blocking member may be disposed on the pixeldefining layer, and may overlap the touch sensor wiring.

In example embodiments, the OLED device may further include aplanarization layer and a pixel defining layer. The planarization layermay have a first contact hole. The pixel defining layer may be disposedon the planarization layer, and may partially expose the lower electrodedisposed in the sub-pixel region. The pixel defining layer may expose atleast a portion of the planarization layer in the transparent region,and may have a second contact hole exposing the first contact hole.

In example embodiments, the OLED device may further include a touchsensor wiring. The touch sensor wiring may be disposed under the pixeldefining layer, and may electrically connect the touch sensor electrodeperforating the first and second contact holes and an external device.The touch sensor wiring may transfer a changed capacitance of the touchsensor electrode to the external device, and may provide a sensingvoltage generated from the external device to the touch sensorelectrode. The pixel defining layer may be opaque.

In example embodiments, the OLED device may further include a pixeldefining layer. The pixel defining layer may be disposed in thetransparent region on the substrate, and may partially expose the lowerelectrode disposed in the sub-pixel region. The touch sensor electrodemay be disposed in the transparent region on the pixel defining layer.

In example embodiments, the OLED device may further include a touchsensor wiring and a light blocking member. The touch sensor wiring maybe disposed on the touch sensor electrode, and may electrically connectthe touch sensor electrode and an external device. The touch sensorwiring may transfer a changed capacitance of the touch sensor electrodeto the external device, and may provide a sensing voltage generated fromthe external device to the touch sensor electrode. The light blockingmember may be disposed on the pixel defining layer, and may overlap thetouch sensor wiring.

In example embodiments, the OLED device may further include asemiconductor element in the sub-pixel region on the substrate. Thesemiconductor element may include an active layer on the substrate, agate electrode on the active layer, and source and drain electrodes onthe gate electrode.

In example embodiments, the touch sensor electrode and the active layermay be simultaneously formed using the same materials.

In example embodiments, a thickness of the touch sensor electrode may beless than a thickness of the active layer, and the touch sensor wiringmay be substantially transparent.

In example embodiments, the OLED device may further include a pixeldefining layer. The pixel defining layer may be disposed on thesubstrate, and may partially expose the lower electrode disposed in thesub-pixel region. The pixel defining layer may partially expose thetouch sensor electrode disposed in the transparent region.

In example embodiments, the OLED device may further include a touchsensor wiring. The touch sensor wiring may be disposed on the touchsensor electrode, and may electrically connect the touch sensorelectrode and an external device. The touch sensor wiring may transfer achanged capacitance of the touch sensor electrode to the externaldevice, and may provide a sensing voltage generated from the externaldevice to the touch sensor electrode

In example embodiments, the substrate may further include an opaqueregion between the sub-pixel region and the transparent region. Thepixel defining layer may be disposed in the opaque region.

In example embodiments, the OLED device may further include a gateinsulation layer and an insulating interlayer. The gate insulation layermay be disposed between the pixel defining layer and the substrate. Thegate insulation layer may partially expose the touch sensor electrode inthe transparent region, and may have a first contact hole located in theopaque region. The insulating interlayer may be disposed on the gateinsulation layer. The insulating interlayer may cover the gateelectrode, and may partially expose the touch sensor electrode in thetransparent region. The insulating interlayer may have a second contacthole exposing the first contact hole.

In example embodiments, the touch sensor electrode may overlap at leasta portion of the opaque region.

In example embodiments, the OLED device may further include a touchsensor wiring. The touch sensor wiring may be disposed on a portionunder which the touch sensor electrode is disposed in the opaque regionon the insulating interlayer, and may electrically connect the touchsensor electrode and an external device via the first and second contactholes. The touch sensor wiring may transfer a changed capacitance of thetouch sensor electrode to the external device, and may provide a sensingvoltage generated from the external device to the touch sensorelectrode.

In example embodiments, the touch sensor wiring and the source and drainelectrodes may be simultaneously formed using the same materials, and athickness of the touch sensor wiring may be the same as a thickness ofthe source and drain electrodes.

In example embodiments, the pixel defining layer may be opaque.

In example embodiments, the OLED device may further include a lightblocking member. The light blocking member may be disposed on the pixeldefining layer, and may overlap the touch sensor wiring.

In example embodiments, the OLED device may further include at least oneinsulation layer on the substrate.

In example embodiments, the insulation layer may not be disposed on thesubstrate such that the insulation layer exposes the transparent regionon the substrate, and the touch sensor electrode may be directlydisposed on the substrate.

In example embodiments, the at least one insulation layer may bedisposed in the transparent region on the substrate, and the touchsensor electrode may be disposed on the at least one insulation layer.

In example embodiments, the OLED device may further include a pixeldefining layer. The pixel defining layer may be disposed on thesubstrate, and may partially expose the lower electrode disposed in thesub-pixel region. The pixel defining layer may partially expose thetouch sensor electrode in the transparent region.

In example embodiments, the substrate may further include an opaqueregion between the sub-pixel region and the transparent region. Thepixel defining layer may be disposed in the opaque region, and the touchsensor wiring may have a first thickness and a second thickness that isless than the first thickness. The touch sensor wiring having the secondthickness may be in contact with the touch sensor electrode in thetransparent region, and the touch sensor wiring having the firstthickness may be disposed in the opaque region on the pixel defininglayer.

According to some aspect of example embodiments, an organic lightemitting display (OLED) device includes a substrate, a lower electrode,a light emitting layer, an upper electrode, a touch sensor electrode,and a touch sensor wiring. The substrate includes a plurality of pixelregions each having sub-pixel regions, a transparent regioncorresponding to the sub-pixel regions, and an opaque region surroundingthe sub-pixel regions and the transparent region. The lower electrodemay be disposed in the sub-pixel region on the substrate. The lightemitting layer may be disposed on the lower electrode. The upperelectrode may be disposed in the sub-pixel region on the light emittinglayer. The touch sensor electrode may be disposed in the transparentregion on the substrate and in a first portion of the opaque region, andmay expose the sub pixel region and a second portion of the opaqueregion surrounding the sub-pixel region. The touch sensor electrode maybe spaced apart from the upper electrode, and may surround the upperelectrode. The touch sensor wiring may be disposed on the touch sensorelectrode, and may electrically connect the touch sensor electrode andan external device. The touch sensor wiring may transfer a changedcapacitance of the touch sensor electrode to the external device, andmay provide a sensing voltage generated from the external device to thetouch sensor electrode.

In example embodiments, the pixel regions may be arranged in a firstdirection and a second direction that is perpendicular to the firstdirection. Adjacent two pixel regions among the pixel regions may bedefined as first and second pixel regions, respectively, and the touchsensor electrode may be integrally formed to expose the sub-pixelregions and the second portion of the opaque region included in thefirst and second pixel regions. The upper electrode may be disposed asan island shape in each of the sub-pixel regions included in the firstand second pixel regions.

In example embodiments, the touch sensor electrode and the upperelectrode may be simultaneously formed using the same materials.

In example embodiments, the touch sensor wiring may extend in the seconddirection on the touch sensor electrode that is integrally formed in thefirst and second pixel regions, and the touch sensor wiring extending inthe second direction may have a planar shape of a bar.

In example embodiments, the OLED device may further include aplanarization layer. The planarization layer may be disposed on thesubstrate, and may have a contact hole located in the transparentregion. The touch sensor wiring may be electrically connected to thetouch sensor electrode via the contact hole of the planarization layer,and may extend in the second direction under the touch sensor electrodewhich is integrally formed in the first and second pixel regions. Thetouch sensor wiring extending in the second direction may have a planarshape of a bar.

According to some aspect of example embodiments, an organic lightemitting display (OLED) device may include a substrate including asub-pixel region and a transparent region, a pixel structure disposed inthe sub-pixel region on the substrate, and a touch sensor electrodedisposed in the transparent region. The touch sensor electrode may notbe disposed in the sub-pixel region.

As an OLED device according to example embodiments includes the touchsensor electrode that is operated in a sensing method using aself-capacitance in the transparent region, the OLED device may sense acontact of the user. Accordingly, a thickness of the OLED device may berelatively decreased. In addition, a manufacturing cost of the OLEDdevice may be reduced because the touch sensor electrode is formed usingthe lower electrode or the upper electrode. In addition, as the touchsensor wiring is not disposed in the transparent region, atransmissivity of the OLED device may not be decreased. Further, as thetouch sensor wiring and the source and drain electrodes aresimultaneously formed, a wiring resistance of the touch sensor wiringmay be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments can be understood in more detail from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a planar view illustrating an organic light emitting display(OLED) device in accordance with example embodiments;

FIG. 2 is a planar view for describing a touch sensor electrode and atouch sensor wiring included in the OLED device of FIG. 1 ;

FIG. 3 is a planar view for describing a pixel region included in theOLED device of FIG. 1 ;

FIG. 4 is a cross-sectional view taken along a line I-I′ of FIG. 1 ;

FIG. 5 is a cross-sectional view for describing a touch sensor electrodeincluded in the OLED device of FIG. 4 ;

FIG. 6 is a block diagram for describing an external device electricallyconnected to a touch sensor electrode included in the OLED device ofFIG. 4 ;

FIGS. 7, 8, 9, and 10 are cross-sectional views illustrating a method ofmanufacturing an OLED device in accordance with example embodiments;

FIG. 11 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 12 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 13 is a planar view illustrating an OLED device in accordance withexample embodiments;

FIG. 14 is a planar view for describing a touch sensor electrode and atouch sensor wiring included in the OLED device of FIG. 13 ;

FIG. 15 is a planar view for describing a pixel region included in theOLED device of FIG. 13 ;

FIG. 16 is a cross-sectional view taken along a line II-II′ of FIG. 13 ;

FIG. 17 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 18 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 19 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 20 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 21 is a planar view illustrating an OLED device in accordance withexample embodiments;

FIG. 22 is a planar view for describing a touch sensor electrode, atouch sensor wiring, and a connection wiring included in the OLED deviceof FIG. 21 ;

FIG. 23 is a planar view illustrating an OLED device in accordance withexample embodiments;

FIG. 24 is a planar view illustrating an OLED device in accordance withexample embodiments;

FIG. 25 is a planar view illustrating an OLED device in accordance withexample embodiments;

FIG. 26 is a planar view for describing a touch sensor electrode, atouch sensor wiring, and an upper electrode included in the OLED deviceof FIG. 25 ;

FIG. 27 is a planar view for describing a pixel region included in theOLED device of FIG. 25 ;

FIG. 28 is a cross-sectional view taken along a line III-III′ of FIG. 25;

FIG. 29 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 30 is a planar view illustrating an OLED device in accordance withexample embodiments;

FIG. 31 is a planar view for describing a touch sensor electrode, atouch sensor wiring, and an upper electrode included in the OLED deviceof FIG. 30 ;

FIG. 32 is a planar view for describing a pixel region included in theOLED device of FIG. 30 ;

FIG. 33 is a cross-sectional view taken along a line IV-IV′ of FIG. 30 ;

FIG. 34 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments;

FIG. 35 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments; and

FIG. 36 is a planar view illustrating an OLED device in accordance withexample embodiments.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present inventive concept will beexplained in detail with reference to the accompanying drawings.

FIG. 1 is a planar view illustrating an organic light emitting display(OLED) device in accordance with example embodiments, and FIG. 2 is aplanar view for describing a touch sensor electrode and a touch sensorwiring included in the OLED device of FIG. 1 . FIG. 3 is a planar viewfor describing a pixel region included in the OLED device of FIG. 1 .

Referring to FIGS. 1, 2, and 3 , an organic light emitting display(OLED) device 100 may include a plurality of pixel regions. One pixelregion 10 among a plurality of pixel regions may include first, second,and third sub-pixel regions 15, 20, and 25, a transparent region 30, andan opaque region 35. For example, the pixel regions 10 may be arrangedin first and second directions D1 and D2 on the entire substrate, whichwill be described below, included in the OLED device 100. Here, thefirst direction D1 (e.g., a direction from the transparent region 30 tothe sub-pixel region 15) may be parallel to an upper surface of thesubstrate, and the second direction D2 may be perpendicular to the firstdirection D1.

First, second, and third sub-pixels may be disposed in the first,second, and third sub-pixel region 15, 20, and 25, respectively. Forexample, the first sub-pixel may emit a red color of light, and thesecond sub-pixel may emit a green color of light. In addition, the thirdsub-pixel may emit a blue color of light. The first through thirdsub-pixels may be substantially disposed at the same level.

In the transparent region 30, a light incident from the outside may betransmitted. In example embodiments, a touch sensor electrode 360 may bedisposed in the transparent region 30. As the touch sensor electrodes360 are disposed in the respective transparent regions 30, the OLEDdevice 100 may sense (or detect) a contact (or an input) position of auser in the front of the OLED device 100.

In the opaque region 35, a pixel defining layer, which will be describedbelow, included in the OLED device 100 may be disposed. For example,each of the first, second, and third sub-pixel region 15, 20, and 25 andthe transparent region 30 may be substantially surrounded by the pixeldefining layer. That is, the first, second, and third sub-pixel regions15, 20, and 25 and the transparent region 30 may be defined by the pixeldefining layer, and the pixel defining layer may expose the first,second, and third sub-pixel region 15, 20, and 25 and the transparentregion 30. The pixel defining layer may extend in the first and seconddirections D1 and D2 to surround the first, second, and third sub-pixelregion 15, 20, and 25 and the transparent region 30. In other word, thepixel defining layer may be disposed in a portion except the first,second, and third sub-pixel region 15, 20, and 25 and the transparentregion 30. The metal wirings (e.g., data signal wirings, scan signalwirings, light emission signal wiring, power supply voltage wirings,etc.) may be disposed in the opaque region 35.

In example embodiments, the transparent region 30 is exposed by thepixel defining layer, but not being limited thereto. In some exampleembodiments, the pixel defining layer may be disposed in the opaqueregion 35 and the transparent region 30. For example, the transparentregion 30 may define a region that i) a light incident from the outsideis transmitted, and ii) the first, second, and third sub-pixels are notdisposed.

In example embodiments, a touch sensor wiring 260 may be disposed in thetransparent region 30 and the opaque region 35 on the substrate. Forexample, the touch sensor wiring 260 may be disposed in the pixelregions 10 that are arranged in the second direction D2 among aplurality of the pixel regions 10. In other word, the touch sensorwiring 260 may extend in the second direction D2 on the substrate, andmay be electrically connected to the touch sensor electrode 360 disposedin the pixel regions 10 that are arranged in the second direction D2among a plurality of the pixel regions 10. For example, the touch sensorwiring 260 may be disposed under the touch sensor electrode 360, and thetouch sensor electrode 360 may be in contact with the touch sensorwiring 260 by a contact hole. Each of the touch sensor electrode 360disposed in the transparent region 30 included in the pixel regions 10may be electrically connected to the touch sensor wiring 260. Here, thetouch sensor wiring 260 and the touch sensor electrode 360 may besubstantially transparent, and a transmissivity of the transparentregion 30 included in the OLED device 100 may not be significantlydecreased. That is, although the touch sensor wiring 260 and the touchsensor electrode 360 are disposed in the transparent region 30, an imageof an object that is located in the rear (or the back) of the OLEDdevice 100 may be transmitted. Accordingly, the OLED device 100 mayserve as a transparent OLED device.

In example embodiments, one pixel region 10 of the OLED device 100includes the first through third sub-pixel regions 15, 20, and 25 andone transparent region 30, but not being limited thereto. In someexample embodiments, for example, a plurality of pixel regions 10 may becorresponding to one transparent region 30.

FIG. 4 is a cross-sectional view taken along a line I-I′ of FIG. 1 , andFIG. 5 is a cross-sectional for describing a touch sensor electrodeincluded in the OLED device of FIG. 4 . FIG. 6 is a block diagram fordescribing an external device electrically connected to a touch sensorelectrode included in the OLED device of FIG. 4 .

Referring to FIGS. 1, 2, 3, 4, 5, and 6 , an OLED device 100 may includea substrate 110, a gate insulation layer 150, an insulating interlayer190, a planarization layer 270, a semiconductor element 250, a touchsensor wiring 260, a pixel structure, a touch sensor electrode 360, apixel defining layer 310, an encapsulation substrate 350, etc. Here, thepixel structure may include a lower electrode 290, a light emittinglayer 330, and an upper electrode 340, and the semiconductor element 250may include an active layer 130, a gate electrode 170, a sourceelectrode 210, and a drain electrode 230.

As described above, the OLED device 100 may include a plurality of pixelregions. One pixel region among a plurality of the pixel regions mayhave a sub-pixel region 15, a transparent region 30, and an opaqueregion 35. The semiconductor element 250, the lower electrode 290, thelight emitting layer 330, the upper electrode 340 may be disposed in thesub-pixel region 15. The pixel defining layer 310 may be disposed in theopaque region 35. In example embodiments, the touch sensor electrode 360and the touch sensor wiring 260 may be disposed in the transparentregion 30. The touch sensor wiring 260 may be electrically connected totouch sensor electrode 360.

The semiconductor element 250, the pixel structure, the touch sensorwiring 260, and the touch sensor electrode 360 may be disposed on thesubstrate 110.

The substrate 110 may be formed of transparent materials. For example,the substrate 110 may include a quartz substrate, a synthetic quartzsubstrate, a calcium fluoride substrate, a fluoride-doped quartzsubstrate, a sodalime glass substrate, a non-alkali glass substrate etc.Alternatively, the substrate 110 may be formed of a flexible transparentmaterial such as a flexible transparent resin substrate (e.g., apolyimide substrate). For example, the polyimide substrate may include afirst polyimide layer, a barrier film layer, a second polyimide layer,etc. Since the polyimide substrate is relatively thin and flexible, thepolyimide substrate may be disposed on a rigid glass substrate to helpsupport the formation of the semiconductor element 250 and the pixelstructure. That is, the substrate 110 may have a structure in which thefirst polyimide layer, the barrier film layer and the second polyimidelayer are stacked on the rigid glass substrate. In a manufacturing theOLED device 100, after an insulating layer (e.g., a buffer layer) isprovided on the second polyimide layer of the polyimide substrate, thesemiconductor element 250 and the pixel structure may be disposed on theinsulating layer. After the semiconductor element 250 and the pixelstructure are formed on the insulating layer, the rigid glass substrateunder which the polyimide substrate is disposed may be removed. It maybe difficult to directly form the semiconductor element 250 and thepixel structure on the polyimide substrate because the polyimidesubstrate is relatively thin and flexible. Accordingly, thesemiconductor element 250 and the pixel structure are formed on thepolyimide substrate and the rigid glass substrate, and then thepolyimide substrate may serve as the substrate 110 of the OLED device100 after the removal of the rigid glass substrate. As the OLED device100 includes the sub-pixel region 15, the transparent region 30, and theopaque region 35, the substrate 110 may also include the sub-pixelregion 15, the transparent region 30, and the opaque region 35.

A buffer layer (not shown) may be disposed on the substrate 110. Thebuffer layer may be disposed on the entire substrate 110. The bufferlayer may prevent the diffusion of metal atoms and/or impurities fromthe substrate 110 into the semiconductor element 250. Additionally, thebuffer layer may control a rate of a heat transfer in a crystallizationprocess for forming the active layer 130, thereby obtaining asubstantially uniform active layer. Furthermore, the buffer layer mayimprove a surface flatness of the substrate 110 when a surface of thesubstrate 110 is relatively uneven. According to a type of the substrate110, at least two buffer layers may be provided on the substrate 110, orthe buffer layer may not be disposed. For example, the buffer layer mayinclude organic materials or inorganic materials.

The semiconductor element 250 may be formed of the active layer 130, thegate electrode 170, the source electrode 210, and the drain electrode230. For example, the active layer 130 may be disposed in the sub-pixelregion 15 on the substrate 110, and may be formed of an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon, polysilicon, etc.), an organic semiconductor, etc.

The gate insulation layer 150 may be disposed on the active layer 130.The gate insulation layer 150 may cover the active layer 130 in thesub-pixel region 15, and may extend in a first direction D1 on thesubstrate 110. That is, the gate insulation layer 150 may be disposed onthe entire substrate 110.

In example embodiments, the gate insulation layer 150 may sufficientlycover the active layer 130, and may have a substantially even surfacewithout a step around the active layer 130. Alternatively, the gateinsulation layer 150 may cover the active layer 130, and may be disposedas a substantially uniform thickness along a profile of the active layer130. The gate insulation layer 150 may be formed of a silicon compound,a metal oxide, etc. For example, the gate insulation layer 150 mayinclude silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride(SiOxNy), silicon oxycarbide (SiOxCy), silicon carbon nitride (SiCxNy),aluminum oxide (AlOx), aluminum nitride (AlNx), tantalum oxide (TaOx),hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx),etc.

The gate electrode 170 may be disposed on the gate insulation layer 150.The gate electrode 170 may be located on a portion of the gateinsulation layer 150 under which the active layer 130 is disposed tooverlap the active layer 130 in a planar view. The gate electrode 170may include a metal, a metal alloy, metal nitride, conductive metaloxide, transparent conductive materials, etc.

The insulating interlayer 190 may be disposed on the gate electrode 170.The insulating interlayer 190 may cover the gate electrode 170 in thesub-pixel region 15. That is, the insulating interlayer 190 may bedisposed on the entire gate insulation layer 150. In exampleembodiments, the insulating interlayer 190 may sufficiently cover thegate electrode 170, and may have a substantially even surface without astep around the gate electrode 170. Alternatively, the insulatinginterlayer 190 may cover the gate electrode 170, and may be disposed asa substantially uniform thickness along a profile of the gate electrode170. The insulating interlayer 190 may include a silicon compound, ametal oxide, etc.

The source electrode 210, the drain electrode 230, and the touch sensorwiring 260 may be disposed on the insulating interlayer 190. The sourceelectrode 210 may be in contact with a first side of the active layer130 via a contact hole formed by removing a portion of the gateinsulation layer 150 and the insulating interlayer 190. The drainelectrode 230 may be in contact with a second side of the active layer130 via a contact hole formed by removing a portion of the gateinsulation layer 150 and the insulating interlayer 190. Accordingly, thesemiconductor element 250 including the active layer 130, the gateelectrode 170, the source electrode 210, and the drain electrode 230 maybe formed.

The touch sensor wiring 260 may be disposed in the transparent region 30on the insulating interlayer 190. For example, the touch sensor wiring260 may be disposed under the touch sensor electrode 360. As illustratedin FIG. 6 , the touch sensor wiring 260 included in the OLED device 100may be electrically connected to the touch sensor electrode 360 and anexternal device 105. In addition, the touch sensor wiring 260 maytransfer a changed capacitance of the touch sensor electrode 360 to theexternal device 105, and may provide a sensing voltage generated fromthe external device 105 to the touch sensor electrode 360. For example,when a user of the OLED device 100 contacts an upper surface of theencapsulation substrate 350 (e.g., a contact of a finger of the user, aportion of a body, a touch pen, etc.), a capacitance of the touch sensorelectrode 360 corresponding to (or adjacent to) the contact surface maybe changed. In other word, a changed capacitance may be generatedbetween a portion of the body that is contacted to the upper surface ofthe encapsulation substrate 350 and the touch sensor electrode 360, andthe external device 105 electrically connected to the touch sensorwiring 260 may sense (or detect) the changed capacitance. After acontact of the user and the OLED device 100 is ended (e.g., the user andthe OLED device 100 are electrically separated.), the external device105 may provide the sensing voltage to the touch sensor electrode 360.Accordingly, the OLED device 100 may sense a contact position of theuser through the external device 105. In example embodiments, theexternal device 105 is disposed in the outside of the OLED device 100,but not being limited thereto. For example, in some example embodiments,the external device 105 may be disposed in the inside of the OLED device100.

Each of the source electrode 210, the drain electrode 230, and the touchsensor wiring 260 may be simultaneously formed using the same materials,and may include a metal, a metal alloy, metal nitride, conductive metaloxide, transparent conductive materials, etc. For example, each of thesource electrode 210, the drain electrode 230, and the touch sensorwiring 260 may be formed of gold (Au), silver (Ag), aluminum (Al), analloy of aluminum, aluminum nitride (AlNx), silver (Ag), an alloy ofsilver, tungsten (W), tungsten nitride (WNx), copper (Cu), an alloy ofcopper, nickel (Ni), chrome (Cr), chrome nitride (CrNx), molybdenum(Mo), an alloy of molybdenum, titanium (Ti), titanium nitride (TiNx),platinum (Pt), tantalum (Ta), tantalum nitride (TaNx), neodymium (Nd),scandium (Sc), strontium ruthenium oxide (SRO), zinc oxide (ZnOx),stannum oxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), indiumtin oxide (ITO), indium zinc oxide (IZO), etc. These may be used aloneor in a suitable combination thereof. In example embodiments, athickness of the touch sensor wiring 260 may be less than that of thesource and drain electrodes 210 and 230. For example, since the touchsensor wiring 260 is disposed in the transparent region 30, a thicknessof the touch sensor wiring 260 may be formed as a thin thickness suchthat a transmissivity of the transparent region 30 is not decreased, andthe touch sensor wiring 260 may be substantially transparent. That is,the touch sensor wiring 260 may be transparent, and the source electrode210 and the drain electrode 230 may be opaque. In addition, the touchsensor wiring 260 and the source and drain electrodes 210 and 230 may beformed as different processes from each other. Alternatively, the touchsensor wiring 260 and the source and drain electrodes 210 and 230 may besimultaneously formed as the same process, and touch sensor wiring 260and the source and drain electrodes 210 and 230 may be opaque.

In example embodiments, the semiconductor element 250 of the OLED device100 has a top gate structure, but not being limited thereto. Forexample, in some example embodiments, the semiconductor element 250 mayhave a bottom gate structure.

In addition, the semiconductor element 250 of the OLED device 100 isdisposed in the sub-pixel region 15, but not being limited thereto. Insome example embodiments, the semiconductor element 250 may be disposedin the transparent region 30 or the opaque region 35.

The planarization layer 270 may be disposed on the source and drainelectrodes 210 and 230 (or the semiconductor element 250), and the touchsensor wiring 260. The planarization layer 270 may cover the sourceelectrode 210, the drain electrode 230, and the touch sensor wiring 260in the sub-pixel region 15 and the transparent region 30. That is, theplanarization layer 270 may be disposed on the entire substrate 110. Forexample, the planarization layer 270 may be disposed as a relativelyhigh thickness to sufficiently cover the touch sensor wiring 260 and thesource and drain electrodes 210 and 230. In this case, the planarizationlayer 270 may have a substantially even upper surface, and aplanarization process may be further performed on the planarizationlayer 270 to implement the even upper surface of the planarization layer270. Alternatively, the planarization layer 270 may cover the touchsensor wiring 260 and the source and drain electrodes 210 and 230, andmay be disposed as a substantially uniform thickness along a profile ofthe touch sensor wiring 260 and the source and drain electrodes 210 and230. The planarization layer 270 may have a contact hole 269 exposing aportion of the touch sensor wiring 260. The touch sensor electrode 360may be in contact with the touch sensor wiring 260 through the contacthole 269, and the touch sensor electrode 360 may be electricallyconnected to the touch sensor wiring 260. The planarization layer 270may include organic materials or inorganic materials.

The lower electrode 290 may be disposed in the sub-pixel region 15 onthe planarization layer 270. The touch sensor electrode 360 may bedisposed in the transparent region 30 on the planarization layer 270.The lower electrode 290 may be in contact with the drain electrode 230of the semiconductor element 250 through a contact hole formed in theplanarization layer 270. Thus, the lower electrode 290 may beelectrically connected to the semiconductor element 250.

When the OLED device 100 may be manufactured as a top emission structurein the sub-pixel region 15, the lower electrode 290 may include a lightreflection layer. For example, as illustrated in FIG. 5 , the lowerelectrode 290 may have a multilayer structure. The multilayer structuremay include the first, second, and third electrode layers 291, 292, and293. The first electrode layer 291 may be disposed in the sub-pixelregion 15 on the planarization layer 270, and the second electrode layer292 and the third electrode layer 293 may be sequentially disposed onthe first electrode layer 291. Here, the first electrode layer 291 andthe third electrode layer 293 may include substantially the samematerials, and the second electrode layer 292 may be interposed betweenthe first electrode layer 291 and the third electrode layer 293. Athickness of the first and third electrode layers 291 and 293 each maybe substantially less than that of the second electrode layer 292, and athickness of the first electrode layer 291 may be substantially the sameas that of the third electrode layer 293.

The first electrode layer 291 may cover an upper surface of theplanarization layer 270. As the first electrode layer 291 is disposed onthe planarization layer 270, the first electrode layer 291 may help theformation of the second electrode layer 292. As the third electrodelayer 293 is disposed on the second electrode layer 292, a colorcoordinate of the OLED device 100 may be readily controlled. The secondelectrode layer 292 may serve as the light reflection layer. The secondelectrode layer 292 may reflect a light emitted from the first lightemitting layer 330 in the front (e.g., a third direction D3 that isvertical to the first and second directions D1 and D2) of the OLEDdevice 100. Thus, the lower electrode 290 including the second electrodelayer 292 may be substantially opaque. Alternatively, the lowerelectrode 290 may have a multilayer structure including the firstelectrode layer 291 and the second electrode layer 292, or may have asingle layer structure including the second electrode layer 292. Forexample, the second electrode layer 292 may include Au, Ag, Al, Pt, Ni,Ti, palladium (Pd), magnesium (Mg), Calcium (Ca), Lithium (Li), Cr, Ta,W, Cu, Mo, Sc, Nd, Iridium (Jr). These may be used alone or in asuitable combination thereof. Alternatively, the second electrode layer292 may be formed of a metal, a metal alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc. Each of the firstelectrode layer 291 and the third electrode layer 293 may besubstantially transparent. For example, each of the first electrodelayer 291 and the third electrode layer 293 may include transparentconductive materials, etc. For example, each of the first electrodelayer 291 and the third electrode layer 293 may include ZnOx, SnOx,InOx, GaOx, ITO, IZO, etc.

In example embodiments, the touch sensor electrode 360 and the lowerelectrode 290 may be spaced apart from each other on the planarizationlayer 270. The touch sensor electrode 360 and the first electrode layer291 may be simultaneously formed using the same materials. That is, thetouch sensor electrode 360 may be formed in a process forming the lowerelectrode 290 without an extra manufacturing process. Thus, amanufacturing cost of the OLED device 100 may be relatively reduced.Alternatively, the touch sensor electrode 360 and the third electrodelayer 293 may be simultaneously formed using the same materials. Thus, athickness of the touch sensor electrode 360 may be less than that of thelower electrode 290, and the touch sensor electrode 360 may betransparent. As described above, the touch sensor electrode 360 may bein contact with the touch sensor wiring 260 through the contact hole269. The OLED device 100 including the touch sensor electrode 360 andthe touch sensor wiring 260 may sense a contact of the user without atouch screen panel additionally disposed on the encapsulation substrate350.

The pixel defining layer 310 may be disposed in the opaque region 35 onthe planarization layer 270 to expose a portion (e.g., both lateralportions) of the lower electrode 290 in the sub-pixel region 15 and aportion (e.g., both lateral portions) of the touch sensor electrode 360in the transparent region 30. Alternatively, the pixel defining layer310 may be disposed in the opaque region 35 and the transparent region30. The light emitting layer 330 may be located on the lower electrode290 where at least a portion is exposed by the pixel defining layer 310.Alternatively, the pixel defining layer 310 may be transparent. Thepixel defining layer 310 may include organic materials or inorganicmaterials.

The light emitting layer 330 may be disposed on a portion where at leasta portion of the lower electrode 290 is exposed. The light emittinglayer 330 may have a multilayer structure including an emission layer(EL), a hole injection layer (HIL), a hole transfer layer (HTL), anelectron transfer layer (ETL), an electron injection layer (EIL), etc.The EL of the light emitting layer 330 may be formed using at least oneof light emitting materials capable of generating different colors oflight (e.g., a red color of light, a blue color of light, and a greencolor of light, etc.) according to first, second, and third sub-pixelsillustrated in FIG. 1 . Alternatively, the EL of the light emittinglayer 330 may generally generate a white color of light by stacking aplurality of light emitting materials capable of generating differentcolors of light such as a red color of light, a green color of light, ablue color of light, etc. In some example embodiments, the HIL, the HTL,the ETL, the EIL, etc. except the EL may be disposed in the transparentregion 30 on the lower electrode 290.

The upper electrode 340 may be disposed on a portion of the pixeldefining layer 310 and the light emitting layer 330. The upper electrode340 may cover the light emitting layer 330 in the sub-pixel region 15,and may expose the transparent region 30. The upper electrode 340 may beformed of a transparent conductive layer such as a metal, a metal alloy,metal nitride, conductive metal oxide and transparent conductivematerials. These may be used alone or in a suitable combination thereof.

The encapsulation substrate 350 may be disposed on the pixel defininglayer 310, the upper electrode 340, and the touch sensor electrode 360.The encapsulation substrate 350 and the substrate 110 may includesubstantially the same materials. For example, the encapsulationsubstrate 350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doped quartz, sodalime glass, non-alkali glass etc. In someexample embodiments, the encapsulation substrate 350 may include atransparent inorganic material or flexible plastic. For example, theencapsulation substrate 350 may include a flexible transparent resinsubstrate. In this case, to increase flexibility of the OLED device 100,the encapsulation substrate 350 may include a stacked structure where atleast one inorganic layer and at least one organic layer are alternatelystacked.

As the OLED device 100 in accordance with example embodiments includesthe touch sensor electrode 360 that senses a self-capacitance in thetransparent region 30 and the touch sensor wiring 260 that iselectrically connected to the touch sensor electrode 360, the OLEDdevice 100 may sense a contact of the user. Accordingly, a thickness ofthe OLED device 100 may be relatively decreased, and a manufacturingcost of the OLED device 100 may be reduced because the touch sensorelectrode 360 is formed using the lower electrode 290.

FIGS. 7, 8, 9, and 10 are cross-sectional views illustrating a method ofmanufacturing an OLED device in accordance with example embodiments.

Referring to FIG. 7 , an active layer 530 may be formed in a sub-pixelregion 15 on a substrate 510. The substrate 510 may be formed usingquartz, synthetic quartz, calcium fluoride, fluoride-doped quartz, asodalime glass, a non-alkali glass etc. Alternatively, a buffer layermay be formed on the substrate 510. The buffer layer may be formed onthe entire substrate 510. The buffer layer may prevent the diffusion ofmetal atoms and/or impurities from the substrate 510 into asemiconductor element 650. The active layer 530 may be formed using anoxide semiconductor, an inorganic semiconductor, an organicsemiconductor, etc. A gate insulation layer 550 may be formed on thesubstrate 510. The gate insulation layer 550 may cover the active layer530. The gate insulation layer 550 may be entirely formed in thesub-pixel region 15, the transparent region 30, and opaque region 35 onthe substrate 510. The gate insulation layer 550 may be formed using asilicon compound, a metal oxide, etc. A gate electrode 570 may be formedon a portion of the gate insulation layer 550 under which the activelayer 530 is located to overlap the active layer 530 in a plan view. Thegate electrode 570 may be formed using a metal, a metal alloy, metalnitride, conductive metal oxide, transparent conductive materials, etc.

Referring to FIG. 8 , an insulating interlayer 590 may be formed on thegate electrode 570. The insulating interlayer 590 may cover the gateelectrode 570. The insulating interlayer 590 may be entirely formed onthe sub-pixel region 15, the transparent region 30, and the opaqueregion 35. The insulating interlayer 590 may be formed using a siliconcompound, a metal oxide, etc. A source electrode 610, a drain electrode630, and a touch sensor wiring 660 may be formed on the insulatinginterlayer 590. Each of the source electrode 610, the drain electrode630, and the touch sensor wiring 660 may be simultaneously formed usingthe same materials. The source electrode 610 may be in contact with afirst side of the active layer 530 via a contact hole formed by removinga portion of the gate insulation layer 550 and the insulating interlayer590. The drain electrode 630 may be in contact with a second side of theactive layer 530 via a contact hole formed by removing a portion of thegate insulation layer 550 and the insulating interlayer 590.Accordingly, the semiconductor element 650 including the active layer530, the gate electrode 570, the source electrode 610, and the drainelectrode 630 may be formed.

In example embodiments, a thickness of the touch sensor wiring 660 maybe less than that of the source and drain electrodes 610 and 630. Forexample, since the touch sensor wiring 660 is formed in the transparentregion 30, a thickness of the touch sensor wiring 660 may be formed as athin thickness such that a transmissivity of the transparent region 30is not decreased, and the touch sensor wiring 660 may be substantiallytransparent. For example, after the source and drain electrodes 610 and630 and the touch sensor electrode 660 are simultaneously formed, thetouch sensor electrode 660 may be partially removed. In some exampleembodiments, the touch sensor wiring 660 and the source and drainelectrodes 610 and 630 may be formed as different processes from eachother.

Alternatively, when the touch sensor wiring 660 and the source and drainelectrodes 610 and 630 have a multilayer structure including atransparent electrode layer and an opaque electrode layer, the opaqueelectrode layer included in the touch sensor electrode 660 may beselectively removed after the source and drain electrodes 610 and 630and the touch sensor electrode 660 are simultaneously formed.

Each of the source and drain electrodes 610 and 630 and the touch sensorelectrode 660 may be formed using a metal, a metal alloy, metal nitride,conductive metal oxide, transparent conductive materials, etc. These maybe used alone or in a suitable combination thereof.

Referring to FIG. 9 , a planarization layer 670 may be formed on theinsulating interlayer 590. The planarization layer 670 may cover thesource electrode 610, the drain electrode 630, and the touch sensorelectrode 660 in the sub-pixel region 15 and the transparent region 30.The planarization layer 670 may be entirely formed in the sub-pixelregion 15, the transparent region 30, and the opaque region 35 on thesubstrate 510. The planarization layer 670 may have a contact hole 669exposing a portion of the touch sensor wiring 660. The touch sensorelectrode 760 may be in contact with the touch sensor wiring 660 via thecontact hole 669, and the touch sensor electrode 760 may be electricallyconnected to the touch sensor wiring 660. The planarization layer 670may be formed using organic materials or inorganic materials.

A lower electrode 690 may be formed in the sub-pixel region 15 on theplanarization layer 670. The lower electrode 690 may be in contact withthe drain electrode 630 of the semiconductor element 650 via a contacthole formed through the planarization layer 670. The lower electrode 690may have a multilayer structure. As illustrated in FIG. 5 , themultilayer structure may include the first, second, and third electrodelayers. The first electrode layer may be formed in the sub-pixel region15 on the planarization layer 670, and the second electrode layer andthe third electrode layer may be sequentially formed on the firstelectrode layer. Here, the first electrode layer and the third electrodelayer may include substantially the same materials, and the secondelectrode layer may be interposed between the first electrode layer andthe third electrode layer. A thickness of the first and third electrodelayers each may be substantially less than that of the second electrodelayer, and a thickness of the first electrode layer may be substantiallythe same as that of the third electrode layer. The second electrodelayer may be substantially opaque. For example, the lower electrode maybe formed using Au, Ag, Al, Pt, Ni, Ti, Pd, Mg, Ca, Li, Cr, Ta, W, Cu,Mo, Sc, Nd, Ir. These may be used alone or in a suitable combinationthereof. Each of the first electrode layer and the third electrode layermay be substantially transparent. For example, each of the firstelectrode layer and the third electrode layer may be formed usingtransparent conductive materials, etc.

In example embodiments, the touch sensor electrode 760 and the firstelectrode layer may be simultaneously formed using the same materials.For example, after the first, second, and third electrode layer areformed on the planarization layer 670, the lower electrode 690 and apreliminary touch sensor electrode are formed by patterning. Then, thetouch sensor electrode 760 may be formed by partially etching thepreliminary touch sensor electrode. Thus, a thickness of the touchsensor electrode 760 may be less than that of the lower electrode 690,and the touch sensor electrode 760 may be substantially transparent.

As described above, the touch sensor electrode 760 may be in contactwith the touch sensor wiring 660 via the contact hole 669. In someexample embodiments, when an OLED device has a bottom emissionstructure, the lower electrode 690 may be formed as a thin thickness(e.g., a thickness of the first electrode layer). That is, the lowerelectrode 690 may be substantially transparent. In this case, athickness of the lower electrode 690 may be substantially the same asthat of the touch sensor electrode 760, and the lower electrode 690 andthe touch sensor electrode 760 may be simultaneously formed using thesame materials.

Referring to FIG. 10 , a pixel defining layer 710 may be formed in theopaque region 35 on the planarization layer 670 to expose a portion ofthe lower electrode 690 in the sub-pixel region 15 and a portion of thetouch sensor electrode 760 in the transparent region 30. The pixeldefining layer 710 may be formed using organic materials or inorganicmaterials.

A light emitting layer 730 may be formed on a portion where at least aportion of the lower electrode 690 is exposed. The light emitting layer730 may have a multilayer structure including EL, HIL, HTL, ETL, EIL,etc. The EL of the light emitting layer 730 may be formed using at leastone of light emitting materials capable of generating different colorsof light (e.g., a red color of light, a blue color of light, and a greencolor of light, etc.) according to first, second, and third sub-pixelsillustrated in FIG. 1 . Alternatively, the EL of the light emittinglayer 730 may generally generate a white color of light by stacking aplurality of light emitting materials capable of generating differentcolors of light such as a red color of light, a green color of light, ablue color of light, etc. In some example embodiments, the HIL, the HTL,the ETL, the EIL, etc. except the EL may be formed in the transparentregion 30. An upper electrode 740 may be formed on a portion of thepixel defining layer 710 and the light emitting layer 730. The upperelectrode 740 may cover the light emitting layer 730 in the sub-pixelregion 15, and may expose the transparent region 30. The upper electrode740 may be formed using a metal, a metal alloy, metal nitride,conductive metal oxide, transparent conductive materials, etc. These maybe used alone or in a suitable combination thereof.

An encapsulation substrate 750 may be formed on the pixel defining layer710, the upper electrode 740, and the touch sensor electrode 760. Theencapsulation substrate 750 and the substrate 510 may includesubstantially the same materials. For example, the encapsulationsubstrate 750 may be formed using quartz, synthetic quartz, calciumfluoride, fluoride-doped quartz, sodalime glass, non-alkali glass etc.The encapsulation substrate 750 is combined with the substrate 510 byperforming an encapsulation process on the upper electrode 740.Accordingly, the OLED device illustrated in FIG. 4 may be manufactured.

FIG. 11 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. An OLED device 200 illustrated inFIG. 11 may have a configuration substantially the same as or similar tothat of an OLED device 100 described with reference to FIG. 4 except apixel defining layer 320, a touch sensor electrode 460, and a touchsensor wiring 465. In FIG. 11 , detailed descriptions for elements thatare substantially the same as or similar to elements described withreference to FIG. 4 may not be repeated.

Referring to FIGS. 4 and 11 , an OLED device 200 may include a substrate110, a gate insulation layer 150, an insulating interlayer 190, aplanarization layer 270, a semiconductor element 250, a touch sensorwiring 465, a pixel structure, a touch sensor electrode 460, a pixeldefining layer 320, an encapsulation substrate 350, etc. Here, the pixelstructure may include a lower electrode 290, a light emitting layer 330,and an upper electrode 340, and the semiconductor element 250 mayinclude an active layer 130, a gate electrode 170, a source electrode210, and a drain electrode 230.

The touch sensor wiring 465 may be disposed in the opaque region 35 onthe insulating interlayer 190. For example, the touch sensor wiring 465may be disposed under the touch sensor electrode 460. As illustrated inFIG. 6 , the touch sensor wiring 465 included in the OLED device 200 maybe electrically connected to the touch sensor electrode 460 and anexternal device 105. In addition, the touch sensor wiring 465 maytransfer a changed capacitance of the touch sensor electrode 460 to theexternal device 105, and may provide a sensing voltage generated fromthe external device 105 to the touch sensor electrode 460. For example,when a user of the OLED device 200 contacts an upper surface of theencapsulation substrate 350, a capacitance of the touch sensor electrode460 corresponding to the contact surface may be changed. In other word,a changed capacitance may be generated between a portion of the bodythat is contacted to the upper surface of the encapsulation substrate350 and the touch sensor electrode 460, and the external device 105electrically connected to the touch sensor wiring 465 may sense thechanged capacitance. After a contact of the user and the OLED device 200is ended, the external device 105 may provide the sensing voltage to thetouch sensor electrode 460. Accordingly, the OLED device 200 may sense acontact position of the user through the external device 105.

Each of the source electrode 210, the drain electrode 230, and the touchsensor wiring 465 may be simultaneously formed using the same materials.In example embodiments, a thickness of the touch sensor wiring 465 maybe substantially the same as that of the source electrode 210 and thedrain electrode 230 each. For example, the touch sensor wiring 465 maybe substantially opaque.

The planarization layer 270 may be disposed on the source and drainelectrodes 210 and 230, and touch sensor wiring 465. The planarizationlayer 270 may have a contact hole 470 exposing a portion of the touchsensor wiring 465. The touch sensor electrode 460 may be in contact withthe touch sensor wiring 465 via the contact hole 470, and the touchsensor electrode 460 may be electrically connected to the touch sensorwiring 465. In example embodiments, the contact hole 470 may be locatedin the opaque region 35. The planarization layer 270 may include organicmaterials or inorganic materials.

In example embodiments, the touch sensor electrode 460 may extend in afirst direction D1 on the planarization layer 270, and the firstdirection D1 may be parallel to an upper surface of the substrate 110.For example, the touch sensor electrode 460 may overlap at least aportion of the opaque region 35, and the contact hole 470 and the touchsensor wiring 465 may be located under the touch sensor electrode 460extending in the first direction D1. As the touch sensor electrode 460is disposed in the opaque region 35, the touch sensor electrode 460 maybe in contact with the touch sensor wiring via the contact hole 470.

The pixel defining layer 320 may be disposed in the opaque region 35 onthe planarization layer 270. The pixel defining layer 320 may blocklight such that an external light is prevented from being reflected fromthe touch sensor wiring 465 disposed under the pixel defining layer 320.For example, the pixel defining layer 320 may have light blockingmaterials to reduce the reflection of the external light. The lightblocking materials may include carbon black, titanium nitride oxide,titanium black, phenylene black, aniline black, cyanine black, nigrosineacid black, etc. The pixel defining layer 320 may include organicmaterials or inorganic materials.

As the OLED device 200 in accordance with example embodiments includesthe opaque pixel defining layer 320 and the touch sensor wiring 465 thathas relatively thick thickness and is located under the pixel defininglayer 320, a wiring resistance of the touch sensor wiring 465 may bedecreased. In addition, as the touch sensor wiring 465 is disposed underthe pixel defining layer 320, a transmissivity of the transparent region30 and a visibility of the OLED device 200 may be relatively increased.

FIG. 12 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. An OLED device 300 illustrated inFIG. 12 may have a configuration substantially the same as or similar tothat of an OLED device 200 described with reference to FIG. 11 except alight blocking member 370. In FIG. 12 , detailed descriptions forelements that are substantially the same as or similar to elementsdescribed with reference to FIG. 11 may not be repeated.

Referring to FIGS. 11 and 12 , an OLED device 300 may include asubstrate 110, a gate insulation layer 150, an insulating interlayer190, a planarization layer 270, a semiconductor element 250, a touchsensor wiring 465, a pixel structure, a touch sensor electrode 460, apixel defining layer 310, an encapsulation substrate 350, etc. Here, thepixel structure may include a lower electrode 290, a light emittinglayer 330, and an upper electrode 340, and the semiconductor element 250may include an active layer 130, a gate electrode 170, a sourceelectrode 210, and a drain electrode 230.

The touch sensor electrode 460 may extend in a first direction D1 on theplanarization layer 270, and the first direction D1 may be parallel toan upper surface of the substrate 110. As the touch sensor electrode 460is disposed in the opaque region 35, the touch sensor electrode 460 maybe in contact with the touch sensor wiring 465 via the contact hole 470.

The pixel defining layer 310 may be disposed in the opaque region 35 onthe planarization layer 270 to expose a portion (e.g., both lateralportions) of the lower electrode 290 in the sub-pixel region 15 and aportion (e.g., both lateral portions) of the touch sensor electrode 360in the transparent region 30. The pixel defining layer 310 may includeorganic materials or inorganic materials.

The light blocking member 370 may be disposed on the pixel defininglayer 310. For example, the light blocking member 370 may be disposed ona lower surface of the encapsulation substrate 350 to overlap the pixeldefining layer 310. When the pixel defining layer 310 is substantiallytransparent, an external light may be reflected from the touch sensorwiring 465 disposed under the pixel defining layer 310. In order toprevent this, the light blocking member 370 which blocks light mayoverlap the touch sensor wiring 465.

For example, the light blocking member 370 may have light blockingmaterials to reduce the reflection of the external light. The lightblocking materials may include carbon black, titanium nitride oxide,titanium black, phenylene black, aniline black, cyanine black, nigrosineacid black, etc. The light blocking member 370 may include a resinhaving the light blocking materials. The resin capable of being used asthe light blocking member 370 may include epoxy resin, acryl resin,siloxane resin, polymer resin, polyimide resin, etc.

As the OLED device 300 in accordance with example embodiments includesthe light blocking member 370 disposed on the pixel defining layer 310,the external light is prevented from being reflected from the touchsensor wiring 465. Accordingly, a visibility of the OLED device 300 maybe relatively increased.

FIG. 13 is a planar view illustrating an OLED device in accordance withexample embodiments, and FIG. 14 is a planar view for describing a touchsensor electrode and a touch sensor wiring included in the OLED deviceof FIG. 13 . FIG. 15 is a planar view for describing a pixel regionincluded in the OLED device of FIG. 13 . An OLED device 400 illustratedin FIGS. 13, 14, and 15 may have a configuration substantially the sameas or similar to that of an OLED device 100 described with reference toFIGS. 1, 2, and 3 except a touch sensor wiring 263. In FIGS. 13, 14, and15 , detailed descriptions for elements that are substantially the sameas or similar to elements described with reference to FIGS. 1, 2, and 3may not be repeated.

Referring to FIGS. 1, 2, 3, 13, 14, and 15 , an OLED device 400 mayinclude a plurality of pixel regions. One pixel region 10 among aplurality of pixel regions may include first, second, and thirdsub-pixel regions 15, 20, and 25, a transparent region 30, and an opaqueregion 35. For example, the pixel regions 10 may be arranged in firstand second directions D1 and D2 on the entire substrate included in theOLED device 400. Here, the first direction D1 may be parallel to anupper surface of the substrate, and the second direction D2 may beperpendicular to the first direction D1. In addition, the opaque region35 may extend in the first and second directions D1 and D2 to surroundthe first, second, and third sub-pixel regions 15, 20, and 25 and thetransparent region 30.

First, second, and third sub-pixels may be disposed in the first,second, and third sub-pixel region 15, 20, and 25, respectively. Forexample, the first sub-pixel may emit a red color of light, and thesecond sub-pixel may emit a green color of light. In addition, the thirdsub-pixel may emit a blue color of light.

In the transparent region 30, a light incident from the outside may betransmitted. In example embodiments, a touch sensor electrode 360 may bedisposed in the transparent region 30.

In the opaque region 35, a pixel defining layer included in the OLEDdevice 400 may be disposed. For example, the first, second, and thirdsub-pixel region 15, 20, and 25 and the transparent region 30 may besubstantially surrounded by the pixel defining layer.

In example embodiments, the touch sensor wiring 263 may be disposed inat least a portion of the transparent region 30 and the opaque region 35on the substrate. For example, the touch sensor wiring 263 may bedisposed in the pixel regions 10 that are arranged in the seconddirection D2 among a plurality of the pixel regions 10. In other word,the touch sensor wiring 263 may extend in the second direction D2 on thesubstrate, and may be electrically connected to the touch sensorelectrode 360 disposed in the pixel regions 10 that are arranged in thesecond direction D2 among a plurality of the pixel regions 10. Forexample, the touch sensor wiring 263 may be disposed on the touch sensorelectrode 360. The touch sensor electrode 360 disposed in thetransparent region 30 included in the pixel regions 10 each may beelectrically connected to the touch sensor wiring 263. Here, the touchsensor wiring 263 and the touch sensor electrode 360 may besubstantially transparent, and at least a portion of the touch sensorwiring 263 may be disposed in the transparent region 30 such that thetouch sensor wiring 263 is in contact with the touch sensor electrode360. In addition, the touch sensor wiring 263 may extend in the seconddirection D2 in the opaque region 35 on the pixel defining layer. Inexample embodiments, the touch sensor wiring 263 may have a firstthickness and a second thickness that is less than the first thickness.The touch sensor wiring 263 having the second thickness may be contactwith the touch sensor electrode 360 in the transparent region 30. Thetouch sensor wiring 263 having the second thickness may be substantiallytransparent in the transparent region 30. Meanwhile, the touch sensorwiring 263 having the first thickness may be disposed in the opaqueregion 35, and may extend in the second direction D2. Accordingly, awiring resistance of the touch sensor wiring 263 may be reduced. Thus, atransmissivity of the transparent region 30 included in the OLED device300 may not be significantly decreased.

FIG. 16 is a cross-sectional view taken along a line II-II′ of FIG. 13 .An OLED device 400 illustrated in FIG. 16 may have a configurationsubstantially the same as or similar to that of an OLED device 100described with reference to FIG. 4 except a touch sensor wiring 263. InFIG. 16 , detailed descriptions for elements that are substantially thesame as or similar to elements described with reference to FIG. 4 maynot be repeated.

Referring to FIGS. 4 and 16 , an OLED device 400 may include a substrate110, a gate insulation layer 150, an insulating interlayer 190, aplanarization layer 270, a semiconductor element 250, a touch sensorwiring 263, a pixel structure, a touch sensor electrode 360, a pixeldefining layer 310, an encapsulation substrate 350, etc. Here, the pixelstructure may include a lower electrode 290, a light emitting layer 330,and an upper electrode 340, and the semiconductor element 250 mayinclude an active layer 130, a gate electrode 170, a source electrode210, and a drain electrode 230.

The touch sensor wiring 263 may be disposed in the transparent region 30on the touch sensor electrode 360. As illustrated in FIG. 6 , the touchsensor wiring 263 included in the OLED device 400 may be electricallyconnected to the touch sensor electrode 360 and an external device 105.In addition, the touch sensor wiring 263 may transfer a changedcapacitance of the touch sensor electrode 360 to the external device105, and may provide a sensing voltage generated from the externaldevice 105 to the touch sensor electrode 360.

The touch sensor wiring 263 and the touch sensor electrode 360 may besubstantially transparent, and the touch sensor wiring 263, and at leasta portion of the touch sensor wiring 263 may be disposed in thetransparent region 30 such that the touch sensor wiring 263 is incontact with the touch sensor electrode 360. In addition, the touchsensor wiring 263 may extend in the second direction D2 in the opaqueregion 35 on the pixel defining layer 310. In example embodiments, thetouch sensor wiring 263 in the transparent region 30 may have a firstthickness, and the touch sensor wiring 263 in the opaque region 35 mayhave a second thickness that is thicker than the first thickness. Thetouch sensor wiring 263 having the second thickness may be contact withthe touch sensor electrode 360 in the transparent region 30. The touchsensor wiring 263 having the second thickness may be substantiallytransparent in the transparent region 30. Meanwhile, the touch sensorwiring 263 having the first thickness may be disposed in the opaqueregion 35, and may extend in the second direction D2. Accordingly, awiring resistance of the touch sensor wiring 263 may be reduced. Inexample embodiments, the touch sensor wiring 263 and the touch sensorelectrode 360 may include different materials from each other. Forexample, after the touch sensor electrode 360 is formed, a preliminarytouch sensor wiring may be formed on the entire substrate 110. In aprocess etching the preliminary touch sensor wiring, the touch sensorelectrode 360 may not be etched using a difference of an etch rate whilethe preliminary touch sensor wiring is partially etched.

FIG. 17 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments, and FIG. 18 is a cross-sectionalview illustrating an OLED device in accordance with example embodiments.OLED devices illustrated in FIGS. 17 and 18 may have a configurationsubstantially the same as or similar to that of an OLED device 100described with reference to FIG. 4 except a touch sensor electrode 361and a touch sensor wiring 272. In FIGS. 17 and 18 , detaileddescriptions for elements that are substantially the same as or similarto elements described with reference to FIG. 4 may not be repeated.

Referring to FIGS. 4 and 17 , an OLED device 500 may include a substrate110, a gate insulation layer 150, an insulating interlayer 190, aplanarization layer 270, a semiconductor element 250, a touch sensorwiring 272, a pixel structure, a touch sensor electrode 361, a pixeldefining layer 310, an encapsulation substrate 350, etc. Here, the pixelstructure may include a lower electrode 290, a light emitting layer 330,and an upper electrode 340, and the semiconductor element 250 mayinclude an active layer 130, a gate electrode 170, a source electrode210, and a drain electrode 230.

In the transparent region 30, the substrate 110 may be exposed byremoving a portion of the gate insulation layer 150, the insulatinginterlayer 190, and the planarization layer 270. The touch sensorelectrode 361 may be disposed on the exposed substrate 110, and thetouch sensor wiring 272 may be disposed in a first side on the touchsensor electrode 361. Alternatively, at least one insulation layer maybe disposed on the substrate 110.

The touch sensor wiring 272 and the touch sensor electrode 361 may besubstantially transparent. As illustrated in FIG. 13 , at least aportion of the touch sensor wiring 272 may be disposed in thetransparent region 30 such that the touch sensor wiring 272 is incontact with the touch sensor electrode 361, and the touch sensor wiring272 may extend along the second direction D2 in the opaque region 35 onthe pixel defining layer 310. In example embodiments, the touch sensorwiring 272 and the touch sensor electrode 361 may include differentmaterials from each other. For example, after the touch sensor electrode361 is formed, a preliminary touch sensor wiring may be formed on theentire substrate 110. In a process etching the preliminary touch sensorwiring, the touch sensor electrode 361 may not be etched using adifference of an etch rate while the preliminary touch sensor wiring ispartially etched.

The touch sensor electrode 361 and the upper electrode 340 may besimultaneously formed using the same materials. In this case, the HIL,the HTL, the ETL, the EIL, etc. except the EL may be disposed in thetransparent region 30 on the substrate 110. Alternatively, the touchsensor electrode 361 and the lower electrode 290 may be simultaneouslyformed using the same materials.

In some example embodiments, as illustrated in FIG. 18 , the touchsensor electrode 361 and the active layer 130 may be simultaneouslyformed using the same materials. For example, the active layer 130 mayinclude an oxide semiconductor, and the touch sensor electrode 361 mayserve as a metal by performing an impurity implantation process. In thiscase, the gate insulation layer 150 may cover both lateral portions ofthe touch sensor electrode 361. For example, a thickness of the touchsensor electrode 361 may be less than that of the active layer 130, andthe touch sensor electrode 361 may be substantially transparent. Inaddition, the touch sensor wiring 272 and the touch sensor electrode 361may include different materials from each other.

As the OLED device 500 in accordance with example embodiments removesthe gate insulation layer 150, the insulating interlayer 190, and theplanarization layer 270 each in the transparent region 30, atransmissivity of the transparent region 30 included in the OLED device500 may be relatively increased.

FIG. 19 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments, and FIG. 20 is a cross-sectionalview illustrating an OLED device in accordance with example embodiments.OLED devices illustrated in FIGS. 19 and 20 may have a configurationsubstantially the same as or similar to that of an OLED device 100described with reference to FIG. 4 except a pixel defining layer 320, atouch sensor electrode 361, a touch sensor wiring 261, and a lightblocking member 370. In FIGS. 19 and 20 , detailed descriptions forelements that are substantially the same as or similar to elementsdescribed with reference to FIG. 4 may not be repeated.

Referring to FIGS. 4 and 19 , an OLED device 700 may include a substrate110, a gate insulation layer 150, an insulating interlayer 190, aplanarization layer 270, a semiconductor element 250, a touch sensorwiring 261, a pixel structure, a touch sensor electrode 361, a pixeldefining layer 320, an encapsulation substrate 350, etc. Here, the pixelstructure may include a lower electrode 290, a light emitting layer 330,and an upper electrode 340, and the semiconductor element 250 mayinclude an active layer 130, a gate electrode 170, a source electrode210, and a drain electrode 230.

The touch sensor electrode 361 may be disposed in the transparent region30 on the substrate 110. The touch sensor electrode 361 and the activelayer 130 may be simultaneously formed using the same materials. Forexample, the active layer 130 may include an oxide semiconductor, andthe touch sensor electrode 361 may serve as a metal by performing animpurity implantation process. A thickness of the touch sensor electrode361 may be less than that of the active layer 130, and the touch sensorelectrode 361 may be substantially transparent. In example embodiments,the touch sensor electrode 361 may extend in the first direction D1 onthe substrate 110, may overlap at least a portion of opaque region 35.The touch sensor wiring 261 may be disposed on the touch sensorelectrode 361 extending in the first direction D1.

The gate insulation layer 150 may be disposed on the substrate 110. Thegate insulation layer 150 may expose a portion of the touch sensorelectrode 361 in the transparent region 30. In addition, the gateinsulation layer 150 may have a first contact hole exposing a portion ofthe touch sensor electrode 361 in the opaque region 35.

The insulating interlayer 190 may be disposed on the gate insulationlayer 150. The insulating interlayer 190 may expose a portion of thetouch sensor electrode 361 in the transparent region 30. In addition,the insulating interlayer 190 may have a second contact hole exposingthe first contact hole in the opaque region 35. The first contact holeand the second contact hole may be formed simultaneously using one mask.

The touch sensor wiring 261 may be disposed in the opaque region 35 onthe insulating interlayer 190. For example, the touch sensor wiring 261may be located on a portion under which the touch sensor electrode 361is disposed. The touch sensor wiring 261 may be in contact with thetouch sensor electrode 361 via the first and second contact holes. Thatis, the touch sensor wiring 261 may be electrically connected to thetouch sensor electrode 361.

The source electrode 210 may be disposed in the opaque region 35 on theplanarization layer 270. In example embodiments, the pixel defininglayer 320 may be substantially opaque such that an external light isprevented from being reflected from the touch sensor wiring 261 disposedunder the pixel defining layer 320. For example, the pixel defininglayer 320 may have light blocking materials to reduce the reflection ofthe external light. The pixel defining layer 320 may include organicmaterials or inorganic materials.

In some example embodiments, as illustrated in FIG. 20 , a lightblocking member 370 may be disposed on the pixel defining layer 310. Forexample, the light blocking member 370 may be disposed on a lowersurface of the encapsulation substrate 350 to overlap the pixel defininglayer 310. When the pixel defining layer 310 is substantiallytransparent, an external light may be reflected from the touch sensorwiring 261 disposed under the pixel defining layer 310. In order toprevent this, the light blocking member 370 having an opaque color mayoverlap the touch sensor wiring 261.

For example, the light blocking member 370 may have light blockingmaterials to reduce the reflection of the external light. In addition,the light blocking member 370 may include a resin having the lightblocking materials.

FIG. 21 is a planar view illustrating an OLED device in accordance withexample embodiments, and FIG. 22 is a planar view for describing a touchsensor electrode, a touch sensor wiring, and a connection wiringincluded in the OLED device of FIG. 21 . FIG. 23 is a planar viewillustrating an OLED device in accordance with example embodiments, andFIG. 24 is a planar view illustrating an OLED device in accordance withexample embodiments. OLED devices illustrated in FIGS. 21, 22, 23, and24 may have a configuration substantially the same as or similar to thatof an OLED device 100 described with reference to FIGS. 1, 2, and 3 . InFIGS. 21, 22, 23, and 24 , detailed descriptions for elements that aresubstantially the same as or similar to elements described withreference to FIGS. 1, 2, and 3 may not be repeated.

Referring to FIGS. 1, 2, 3, 21, and 22 , an OLED device 900 may includea plurality of pixel regions. One pixel region 10 among a plurality ofpixel regions may include first, second, and third sub-pixel regions 15,20, and 25, a transparent region 30, and an opaque region 35. Forexample, the pixel regions 10 may be arranged in first and seconddirections D1 and D2 on the entire substrate included in the OLED device900. Here, the first direction D1 may be parallel to an upper surface ofthe substrate, and the second direction D2 may be perpendicular to thefirst direction D1. In addition, the opaque region 35 may extend in thefirst and second directions D1 and D2 to surround the first, second, andthird sub-pixel regions 15, 20, and 25 and the transparent region 30.

The touch sensor wiring 260 may extend in the second direction D2 on thesubstrate, and may be electrically connected to the touch sensorelectrode 360 disposed in the pixel regions 10 that are arranged in thesecond direction D2 among a plurality of the pixel regions 10. Inexample embodiments, adjacent two pixel regions 10 in the firstdirection D1 among the pixel regions 10 may be defined as first andsecond pixel regions, respectively. The touch sensor electrode 360disposed in the first pixel region may overlap the touch sensor wiring260, and may be in directly contact with the touch sensor wiring 260 viathe contact hole 269. Meanwhile, the touch sensor electrode 360 disposedin the second pixel region may not overlap the touch sensor wiring 260,and may be electrically connected to the touch sensor electrode 360disposed in the first pixel region through the connection wiring 264.For example, the connection wiring 264 may have a contact hole 271overlapping the touch sensor electrode 360 of the first pixel region anda contact hole 272 overlapping the touch sensor electrode 360 of thesecond pixel region.

The touch sensor electrode 360 of the first pixel region and the touchsensor electrode 360 of the second pixel region may be electricallyconnected to each other via the contact holes 271 and 272, respectively.In this case, when a user contacts a portion corresponding to at leastone of the touch sensor electrode 360 of the first pixel region and thetouch sensor electrode 360 of the second pixel region, the OLED device900 may sense a contact of the user.

In another example embodiment, as illustrated in FIG. 23 , the OLEDdevice 1000 may include a pixel region 11 having the transparent regionthat the transparent region 30 of the first pixel region and thetransparent region 30 of the second pixel region are combined, and thetransparent region may be defined as a transparent region 31. In onepixel region 11 included in the OLED device 1000, the transparent region31 may be located between two of first, second, and third sub-pixelregions 15, 20, and 25. The touch sensor electrode 362 may be disposedin the transparent region 31 that has a relatively large area (or size).The pixel regions 11 may be arranged in the first and second directionsD1 and D2.

The touch sensor wiring 260 may extend in the second direction D2 on thesubstrate, and may be electrically connected to the touch sensorelectrode 362 disposed in the pixel regions 11 that are arranged in thesecond direction D2 among a plurality of the pixel regions 11. In thiscase, when the user contacts a portion corresponding to the touch sensorelectrode 362 having a relatively large area, the OLED device 1000 maysense a contact of the user.

In example embodiments, since the touch sensor wiring 260 extends in thesecond direction D2, the touch sensor wiring 260 may be connected to thetouch sensor electrodes 362 arranged in the second direction D2, but notbeing limited thereto. In some example embodiments, the touch sensorwiring 260 may extend in the first direction D1, and may be connected tothe touch sensor electrode 362 arranged in the first direction D1.

In still another example embodiment, as illustrated in FIG. 24 , theOLED device 1100 may include the transparent region 31 that has arelatively large area, and the touch sensor electrode 362 may bedisposed in the transparent region 31.

Adjacent two pixel regions 11 in the first direction D1 among the pixelregions 11 may be defined as first and second pixel regions,respectively. The touch sensor electrode 362 disposed in the first pixelregion may overlap the touch sensor wiring 260, and may be in directlycontact with the touch sensor wiring 260 via a contact hole. Meanwhile,the touch sensor electrode 362 disposed in the second pixel region maynot overlap the touch sensor wiring 260, and may be electricallyconnected to the touch sensor electrode 362 disposed in the first pixelregion through a connection wiring 264. For example, the connectionwiring 264 may have a contact hole 268 overlapping the touch sensorelectrode 362 of the first pixel region and a contact hole 269overlapping the touch sensor electrode 362 of the second pixel region.The touch sensor electrode 362 of the first pixel region and the touchsensor electrode 362 of the second pixel region may be electricallyconnected to each other via the contact holes 268 and 269, respectively.In this case, when a user contacts a portion corresponding to at leastone of the touch sensor electrode 362 of the first pixel region and thetouch sensor electrode 362 of the second pixel region, the OLED device1100 may sense a contact of the user. Accordingly, since the number ofthe touch sensor wiring 260 is decreased, a transmissivity of the OLEDdevice 1100 may be relatively increased.

FIG. 25 is a planar view illustrating an OLED device in accordance withexample embodiments, and FIG. 26 is a planar view for describing a touchsensor electrode, a touch sensor wiring, and an upper electrode includedin the OLED device of FIG. 25 . FIG. 27 is a planar view for describinga pixel region included in the OLED device of FIG. 25 . An OLED device1200 illustrated in FIGS. 25, 26, and 27 may have a configurationsubstantially the same as or similar to that of an OLED device 100described with reference to FIGS. 1, 2 , and 3 except a touch sensorelectrode 363 and a upper electrode 341. In FIGS. 25, 26, and 27 ,detailed descriptions for elements that are substantially the same as orsimilar to elements described with reference to FIGS. 1, 2, and 3 maynot be repeated.

Referring to FIGS. 1, 2, 3, 25, 26, and 27 , an OLED device 1200 mayinclude a plurality of pixel regions. One pixel region 10 among aplurality of pixel regions may include first, second, and thirdsub-pixel regions 15, 20, and 25, a transparent region 30, and an opaqueregion 35. For example, the pixel regions 10 may be arranged in firstand second directions D1 and D2 on the entire substrate included in theOLED device 1200. Here, the first direction D1 may be parallel to anupper surface of the substrate, and the second direction D2 may beperpendicular to the first direction D1. In addition, the opaque region35 may extend in the first and second directions D1 and D2 to surroundthe first, second, and third sub-pixel regions 15, 20, and 25 and thetransparent region 30.

First, second, and third sub-pixels may be disposed in the first,second, and third sub-pixel regions 15, 20, and 25, respectively. Theupper electrode 341 may be disposed in the first, second, and thirdsub-pixel regions 15, 20, and 25 on the first, second, and thirdsub-pixels.

The touch sensor electrode 363 may be disposed in the transparent region30 and a first portion of the opaque region 35 on the substrate. Thetouch sensor electrode 363 may expose the first, second, and thirdsub-pixel regions 15, 20, and 25 and a second portion of the opaqueregion 35 surrounding the first, second, and third sub-pixel regions 15,20, and 25. The touch sensor electrode 363 and the upper electrode 341may be spaced apart from each other, and the touch sensor electrode 363may substantially surround the upper electrode 341.

In example embodiments, adjacent two pixel regions 10 among the pixelregions 10 may be defined as first and second pixel regions,respectively. The touch sensor electrode 363 may be integrally formed inthe first and second pixel regions to expose two of the sub-pixelregions 15, 20, and 25 and the second portion of the opaque region 35included in the first and second pixel regions each. In this case, theupper electrode 341 may be disposed as a substantially island shape inthe two of the first, second, and third sub-pixel regions 15, 20, and 25included in the first and second pixel regions, In this way, the touchsensor electrode 363 may be integrally formed in adjacent at least twopixel regions 10. As illustrated in FIGS. 25 and 26 , the touch sensorelectrode 363 may be integrally formed in adjacent nine (3*3) pixelregions 10.

The touch sensor wiring 260 may be disposed in the transparent region 30and the opaque region 35 on the substrate. For example, the touch sensorwiring 260 may be disposed under the integrally formed touch sensorelectrode 363. The touch sensor wiring 260 may extend in the seconddirection D2, and may have a planar shape of a bar.

FIG. 28 is a cross-sectional view taken along a line III-III′ of FIG. 25, and FIG. 29 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. OLED devices illustrated in FIGS.28 and 29 may have a configuration substantially the same as or similarto that of an OLED device 100 described with reference to FIG. 4 . InFIGS. 28 and 29 , detailed descriptions for elements that aresubstantially the same as or similar to elements described withreference to FIG. 4 may not be repeated.

Referring to FIGS. 4 and 28 , an OLED device 1300 may include asubstrate 110, a gate insulation layer 150, an insulating interlayer190, a planarization layer 270, a semiconductor element 250, a touchsensor wiring 260, a pixel structure, a touch sensor electrode 363, apixel defining layer 310, an encapsulation substrate 350, etc. Here, thepixel structure may include a lower electrode 290, a light emittinglayer 330, and an upper electrode 341, and the semiconductor element 250may include an active layer 130, a gate electrode 170, a sourceelectrode 210, and a drain electrode 230.

The upper electrode 341 may be electrically connected to a low powersupply voltage wiring (not shown) disposed in the opaque region 35 onthe substrate 110 via a contact hole, and the low power supply voltagewiring may provide a low power supply voltage to the upper electrode341.

The touch sensor electrode 363 and the upper electrode 341 may besimultaneously formed using the same materials, may be located at thesame level. For example, after a preliminary electrode is entirelyformed on the planarization layer 270, the pixel defining layer 310, thelight emitting layer 330, the touch sensor electrode 363 and the upperelectrode 341 may be formed by partially etching. The touch sensorelectrode 363 and the upper electrode 341 may be spaced apart from eachother in the opaque region 35 on the pixel defining layer 310. The touchsensor electrode 363 may be in contact with the touch sensor wiring 260via a contact hole 268.

The touch sensor wiring 260 may extend in the second direction D2 underthe integrally formed touch sensor electrode 363, and may have a planarshape of a bar.

In some example embodiments, as illustrated in FIG. 29 , the touchsensor wiring 265 included in the OLED device 1400 may extend in thesecond direction D2 on the integrally formed touch sensor electrode 363,and may have a planar shape of a bar. Here, the upper electrode 341 maybe electrically connected to a low power supply voltage wiring (notshown) disposed in the opaque region 35 on substrate 110 via a contacthole, and the low power supply voltage wiring may provide a low powersupply voltage to the upper electrode 341. In addition, the touch sensorwiring 265 and the touch sensor electrode 363 may include differentmaterials from each other. For example, after the touch sensor electrode265 is formed, a preliminary touch sensor wiring may be formed on theentire substrate 110. In a process etching the preliminary touch sensorwiring, the touch sensor electrode 363 may not be etched using adifference of an etch rate while the preliminary touch sensor wiring ispartially etched.

FIG. 30 is a planar view illustrating an OLED device in accordance withexample embodiments, and FIG. 31 is a planar view for describing a touchsensor electrode, a touch sensor wiring, and an upper electrode includedin the OLED device of FIG. 30 . FIG. 32 is a planar view for describinga pixel region included in the OLED device of FIG. 30 . An OLED device1600 illustrated in FIGS. 30, 31, and 32 may have a configurationsubstantially the same as or similar to that of an OLED device 1200described with reference to FIGS. 25, 26, and 27 except a touch sensorelectrode 365 and a upper electrode 342. In FIGS. 30, 31 , and 32,detailed descriptions for elements that are substantially the same as orsimilar to elements described with reference to FIGS. 25, 26, and 27 maynot be repeated.

Referring to FIGS. 25, 26, 27, 30, 31, and 32 , an OLED device 1600 mayinclude a plurality of pixel regions. One pixel region 10 among aplurality of pixel regions may include first, second, and thirdsub-pixel regions 15, 20, and 25, a transparent region 30, and an opaqueregion 35. For example, the pixel regions 10 may be arranged in firstand second directions D1 and D2 on the entire substrate included in theOLED device 1600. Here, the first direction D1 may be parallel to anupper surface of the substrate, and the second direction D2 may beperpendicular to the first direction D1. In addition, the opaque region35 may extend in the first and second directions D1 and D2 to surroundthe first, second, and third sub-pixel regions 15, 20, and 25 and thetransparent region 30.

First, second, and third sub-pixels may be disposed in the first,second, and third sub-pixel regions 15, 20, and 25, respectively. Theupper electrode 342 may be disposed in the first, second, and thirdsub-pixel regions 15, 20, and 25 on the first, second, and thirdsub-pixels. For example, the upper electrode 342 may include a firstextension extending in the first direction D1 on the substrate and asecond extension extending in the second direction D2 on the substrate.Adjacent three pixel regions 10 in the first direction D1 among thepixel regions 10 may be defined as first, second, and third pixelregions, respectively. The second extensions of the upper electrode 342each may be disposed on the first, second, and third sub-pixel regions15, 20, and 25 included in the first pixel region, the first, second,and third sub-pixel regions 15, 20, and 25 included in the second pixelregion, and the first, second, and third sub-pixel regions 15, 20, and25 included in the third pixel region. A first side of the secondextensions each of the upper electrode 342 may be in contact with thefirst extension extending in the first direction D1 of the upperelectrode 342 in the bottom of the opaque region 35 included in thepixel region 10. The first and second extensions of the upper electrode342 may be integrally formed, and may have a substantially W shape. Afirst side of the upper electrode 342 may be electrically connected to alow power supply voltage wiring (not shown) disposed in the border ofthe OLED device 1600, and the low power supply voltage wiring mayprovide a low power supply voltage to the upper electrode 342.

The touch sensor electrode 365 may be disposed in the transparent region30. For example, the touch sensor electrode 365 may include a firstextension extending in the first direction D1 on the substrate and asecond extension extending in the second direction D2 on the substrate.Adjacent three pixel regions 10 in the first direction D1 among thepixel regions 10 may be defined as first, second, and third pixelregions, respectively. The second extensions of the touch sensorelectrode 365 each may be disposed on the transparent region 30 includedin the first pixel region, the transparent region 30 included in thesecond pixel region, and the transparent region 30 included in the thirdpixel region. A first side of the second extensions each of the touchsensor electrode 365 may be in contact with the first extensionextending in the first direction D1 of the touch sensor electrode 365 inthe top of the opaque region 35 included in the pixel region 10. Thefirst extensions and the second extensions are disposed on an oppositeside with respect to the transparent region 30. The first and secondextensions of the touch sensor electrode 365 may be integrally formed,and may have a substantially M shape. The upper electrode 342 and thetouch sensor electrode 365 may be spaced apart from each other on thesubstrate. The first extensions and the second extensions areinterdigited each other along a first direction D1.

The touch sensor wiring 262 may be disposed in the opaque region 35 onthe substrate. For example, the touch sensor wiring 262 may be disposedunder the integrally formed touch sensor electrode 365. The touch sensorwiring 262 may extend in the second direction D2, and may have a planarshape of a bar.

FIG. 33 is a cross-sectional view taken along a line IV-IV′ of FIG. 30 ,and FIG. 34 is a cross-sectional view illustrating an OLED device inaccordance with example embodiments. FIG. 35 is a cross-sectional viewillustrating an OLED device in accordance with example embodiments. OLEDdevices illustrated in FIGS. 33, 34 and 35 may have a configurationsubstantially the same as or similar to that of an OLED devicesdescribed with reference to FIGS. 28 and 29 . In FIGS. 34, 35, and 39 ,detailed descriptions for elements that are substantially the same as orsimilar to elements described with reference to FIGS. 28 and 39 may notbe repeated.

Referring to FIGS. 28, 29, and 33 , an OLED device 1700 may include asubstrate 110, a gate insulation layer 150, an insulating interlayer190, a planarization layer 270, a semiconductor element 250, a touchsensor wiring 262, a pixel structure, a touch sensor electrode 365, apixel defining layer 320, an encapsulation substrate 350, etc. Here, thepixel structure may include a lower electrode 290, a light emittinglayer 330, and an upper electrode 342, and the semiconductor element 250may include an active layer 130, a gate electrode 170, a sourceelectrode 210, and a drain electrode 230.

The touch sensor electrode 365 and the upper electrode 342 may besimultaneously formed using the same materials, may be located at thesame level. For example, after a preliminary electrode is entirelyformed on the planarization layer 270, the pixel defining layer 310, thelight emitting layer 330, the touch sensor electrode 365 and the upperelectrode 342 may be formed by partially etching. The touch sensorelectrode 365 and the upper electrode 342 may be spaced apart from eachother in the opaque region 35 on the pixel defining layer 320. The touchsensor electrode 365 may be in contact with the touch sensor wiring 262via a contact hole 269.

The touch sensor wiring 262 may extend along the second direction D2 inthe opaque region 35 under the integrally formed touch sensor electrode365, and may have a planar shape of a bar. In example embodiments, athickness of the touch sensor wiring 262 may be the same as that of thesource electrode 210 and the drain electrode 230 each. For example, thetouch sensor wiring 262 may be substantially opaque. The touch sensorwiring and the source electrode 210 and the drain electrode 230 may beformed of the same material through the same process.

The pixel defining layer 320 may be disposed in the opaque region 35 onthe planarization layer 270. In example embodiments, the pixel defininglayer 320 may be substantially opaque such that an external light isprevented from being reflected from the touch sensor wiring 262 disposedunder the pixel defining layer 320. For example, the pixel defininglayer 320 may have light blocking materials to reduce the reflection ofthe external light.

In another example embodiment, as illustrated in FIG. 34 , a lightblocking member 370 included in the OLED device 1800 may be disposed onthe pixel defining layer 310. For example, the light blocking member 370may be disposed on a lower surface of the encapsulation substrate 350 tooverlap the pixel defining layer 310. When the pixel defining layer 310is substantially transparent, an external light may be reflected fromthe touch sensor wiring 265 disposed on the pixel defining layer 310. Inorder to prevent this, the light blocking member 370 which blocks lightmay overlap the touch sensor wiring 265. For example, the light blockingmember 370 may have light blocking materials to reduce the reflection ofthe external light. In addition, the light blocking member 370 mayinclude a resin having the light blocking materials. In this case, thetouch sensor wiring 265 may have a relatively thick thickness. Inaddition, the touch sensor wiring 265 and the touch sensor electrode 365may include different materials from each other. For example, after thetouch sensor electrode 365 is formed, a preliminary touch sensor wiringmay be formed on the entire substrate 110. In a process etching thepreliminary touch sensor wiring, the touch sensor electrode 365 may notbe etched using a difference of an etch rate while the preliminary touchsensor wiring is partially etched.

In still another example embodiment, as illustrated in FIG. 35 , theOLED device 1900 may include a pixel defining layer 330 disposed in thetransparent region 30 on the planarization layer 270. The pixel defininglayer 330 may partially expose the lower electrode 290 disposed in thesub-pixel region 15, and may be entirely disposed in the transparentregion 30. The touch sensor electrode 366 may be disposed on the pixeldefining layer 330, and have a substantially even surface. The pixeldefining layer 330 may be a transparent material. In addition, the touchsensor wiring 265 and the touch sensor electrode 366 may includedifferent materials from each other.

FIG. 36 is a planar view illustrating an OLED device in accordance withexample embodiments.

Referring to FIG. 36 , an OLED device 2000 may include a first displayregion 50 and a second display region 60. The first display region 50may be the same as pixel regions included in an OLED device 100illustrated in FIG. 1 . For example, a plurality of pixel regionsincluding a touch sensor electrode 360 may be arranged in the firstdisplay region 50. A plurality of pixel regions including a touch sensorelectrode 362 having a relatively large area may be arranged in thesecond display region 60. In example embodiments, the first and seconddisplay regions 50 and 60 included in the OLED device 2000 may bedistinguished according to the number of sub-pixels or a size of atransparent region 30. For example, the number of sub-pixels in thefirst display region 50 may be greater than that of the second displayregion 60. An image of a high definition may be display in the firstdisplay region 50, and, thus, a transmissivity of the OLED device 2000in the first display region 50 may be decreased. Meanwhile, a size ofthe transparent region 30 of the second display region 60 may be greaterthan that of the first display region 50. Thus, a size of the touchsensor electrode 362 may become large, and a sensitivity of the touchsensor electrode 362 may be increased in the second display region 60.

The present invention may be applied to various display devicesincluding an organic light emitting display device. For example, thepresent invention may be applied to vehicle-display device, aship-display device, an aircraft-display device, portable communicationdevices, display devices for display or for information transfer, amedical-display device, etc.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concept. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcept as defined in the claims. Therefore, it is to be understood thatthe foregoing is illustrative of various example embodiments and is notto be construed as limited to the specific example embodimentsdisclosed, and that modifications to the disclosed example embodiments,as well as other example embodiments, are intended to be included withinthe scope of the appended claims.

What is claimed is:
 1. An organic light-emitting diode (“OLED”) displaycomprising: a substrate; a plurality of thin film transistors disposedon the substrate, at least one of the plurality of thin film transistorscomprising an active layer, a gate electrode, a source electrode, and adrain electrode; a plurality of pixels including a plurality of lightemitting layers, a plurality of lower electrodes, and an upper electrodedisposed on the substrate, the plurality of light emitting layers beingdisposed between the plurality of lower electrodes and the upperelectrode; an encapsulation layer disposed on the plurality of pixels; apixel defining layer disposed on the substrate, the pixel defining layerhaving a plurality of openings defined therein for exposing at leastpart of the plurality lower electrodes; and a touch sensor including aplurality of touch sensor electrodes, and a plurality of touch sensorwirings disposed on the substrate, wherein the source electrode, thedrain electrode, and the plurality of touch sensor wirings include samematerials, wherein the plurality of touch sensor electrodes are disposedon the pixel defining layer to overlap the pixel defining layer in aplan view, wherein the encapsulation layer includes at least oneinorganic layer and at least one organic layer, wherein each of theplurality of touch sensor electrodes is disposed across at least ninepixel areas, wherein a thickness of at least one of the plurality oftouch sensor wirings is less than a thickness of the source or the drainelectrode, wherein the plurality of touch sensor wirings, the sourceelectrode, and the drain electrode include aluminum and titanium, andwherein each of the plurality of touch sensor wirings is connected toeach of the plurality of touch sensors.
 2. The OLED display of claim 1,wherein at least one of the plurality of touch sensor wiring is disposedon the pixel defining layer to overlap the pixel defining layer in theplan view.
 3. The OLED display of claim 2, wherein each of the pluralityof touch sensor senses a self-capacitance.
 4. An organic light-emittingdiode (“OLED”) display comprising: a substrate; a plurality of thin filmtransistors disposed on the substrate, at least one of the plurality ofthin film transistors comprising an active layer, a gate electrode, asource electrode, and a drain electrode; a plurality of pixels includinga plurality of light emitting layers, a plurality of lower electrodes,and an upper electrode disposed on the substrate, the plurality of lightemitting layers being disposed between the plurality of lower electrodesand the upper electrode; an encapsulation layer disposed on theplurality of pixels; a pixel defining layer disposed on the substrate,the pixel defining layer having a plurality of openings defined thereinfor exposing at least part of the plurality lower electrodes; and atouch sensor including a plurality of touch sensor electrodes, aplurality of touch sensor wirings, and a plurality of connection wiringsdisposed on the substrate, each of the plurality of connection wiringsconnecting adjacent touch sensor electrodes among the plurality of touchsensor electrodes, wherein the source electrode, the drain electrode,and the plurality of touch sensor wirings include same materials,wherein the source electrode, the drain electrode, and the plurality ofconnection wirings include same materials, wherein the plurality ofconnection wirings are disposed on the pixel defining layer to overlapthe pixel defining layer in a plan view, wherein the encapsulation layerincludes at least one inorganic layer and at least one organic layer,wherein each of the plurality of touch sensor electrodes is disposedacross at least nine pixel areas, wherein a thickness of at least one ofthe plurality of touch sensor wirings is less than a thickness of thesource electrode or the drain electrode, and wherein the plurality oftouch sensor wirings, the source electrode, the drain electrode, and theplurality of connection wirings include aluminum and titanium.
 5. Anorganic light-emitting diode (“OLED”) display comprising: a substrate; aplurality of thin film transistors disposed on the substrate, at leastone of the plurality of thin film transistors comprising an activelayer, a gate electrode, a source electrode, and a drain electrode; aplurality of pixels including a plurality of light emitting layers, aplurality of lower electrodes, and an upper electrode disposed on thesubstrate, the plurality of light emitting layers being disposed betweenthe plurality of lower electrodes and the upper electrode; anencapsulation layer disposed on the plurality of pixels; a pixeldefining layer disposed on the substrate, the pixel defining layerhaving a plurality of openings defined therein for exposing at leastpart of the plurality lower electrodes; and a touch sensor including aplurality of touch sensor electrodes, a plurality of touch sensorwirings, and a plurality of connection wirings disposed on thesubstrate, each of the plurality of connection wirings connectingadjacent touch sensor electrodes among the plurality of touch sensorelectrodes, wherein the source electrode, the drain electrode, and theplurality of touch sensor wirings include same materials, wherein thesource electrode, the drain electrode, and the plurality of connectionwirings include same materials, wherein the plurality of connectionwirings are disposed on the pixel defining layer to overlap the pixeldefining layer in a plan view, wherein the encapsulation layer includesat least one inorganic layer and at least one organic layer, whereineach of the plurality of touch sensor electrodes is disposed across atleast nine pixel areas, wherein a thickness of at least one of theplurality of touch sensor wirings is substantially same as a thicknessof the source electrode or the drain electrode, and wherein theplurality of touch sensor wirings, the source electrode, the drainelectrode, and the plurality of connection wirings include aluminum andtitanium.
 6. An organic light-emitting diode (“OLED”) displaycomprising: a substrate; a plurality of thin film transistors disposedon the substrate, at least one of the plurality of thin film transistorscomprising an active layer, a gate electrode, a source electrode, and adrain electrode; a plurality of pixels including a plurality of lightemitting layers, a plurality of lower electrodes, and an upper electrodedisposed on the substrate, the plurality of light emitting layers beingdisposed between the plurality of lower electrodes and the upperelectrode; an encapsulation layer disposed on the plurality of pixels; apixel defining layer disposed on the substrate, the pixel defining layerhaving a plurality of openings defined therein for exposing at leastpart of the plurality lower electrodes; and a touch sensor including aplurality of touch sensor electrodes, and a plurality of touch sensorwirings disposed on the substrate, wherein the source electrode, thedrain electrode, and the plurality of touch sensor wirings include samematerials, wherein the plurality of touch sensor electrodes are disposedon the pixel defining layer to overlap the pixel defining layer in aplan view, wherein the encapsulation layer includes at least oneinorganic layer and at least one organic layer, wherein each of theplurality of touch sensor electrodes is disposed across at least ninepixel areas, wherein a thickness of at least one of the plurality oftouch sensor wirings is substantially same as a thickness of the sourceor the drain electrode, and wherein the plurality of touch sensorwirings, the source electrode, and the drain electrode include aluminumand titanium.
 7. The OLED display of claim 6, wherein at least one ofthe plurality of touch sensor wiring is disposed on the pixel defininglayer to overlap the pixel defining layer in the plan view.
 8. The OLEDdisplay of claim 7, wherein each of the plurality of touch sensor sensesa self-capacitance.
 9. An organic light-emitting diode (“OLED”) displaycomprising: a substrate; a plurality of thin film transistors disposedon the substrate, at least one of the plurality of thin film transistorscomprising an active layer, a gate electrode, a source electrode, and adrain electrode; a plurality of pixels including a plurality of lightemitting layers, a plurality of lower electrodes, and an upper electrodedisposed on the substrate, the plurality of light emitting layers beingdisposed between the plurality of lower electrodes and the upperelectrode; an encapsulation layer disposed on the plurality of pixels; apixel defining layer disposed on the substrate, the pixel defining layerhaving a plurality of openings defined therein for exposing at leastpart of the plurality lower electrodes; touch sensor electrodes on thesubstrate; touch sensor wirings; and connection wirings connectingadjacent touch sensor electrodes on the substrate, wherein the sourceelectrode, the drain electrode, and the touch sensor wirings includesame materials, wherein the source electrode, the drain electrode, andthe connection wirings include same materials, wherein the connectionwirings are disposed on the pixel defining layer to overlap the pixeldefining layer in a plan view, wherein the encapsulation layer includesat least one inorganic layer and at least one organic layer, wherein thetouch sensor electrode is disposed across at least nine pixel areas,wherein the touch sensor wiring is disposed in a first region and asecond region, wherein a thickness of a portion of the touch sensorwiring in the first region is less than a thickness of a portion of thetouch sensor wiring in the second region, and wherein the touch sensorwiring, the source electrode, the drain electrode, and the connectionwirings include aluminum and titanium.